| The table above shows the performance of a WARP Speed IGBT, compared with that of a benchmark power MOSFET in a 2000W power supply. As can be seen from the efficiency curves, the WARP Speed IGBT in TO-247 offers the same efficiency at full load as the power MOSFET in Super-247. Note that this closely-matching performance is achieved for the IGBT using a much smaller silicon wafer die that that used for the power MOSFET. The device cost is dependent on the wafer dimensions; compared to a MOSFET of the same current ratings, WARP Speed IGBTs offer a lass expensive solution in many power conversion applications. Switch Mode Power Supplies in high voltage AC-DC applications normally operate in the 80KHz - 150KHz range. The recent advancement in semiconductor technology have dramatically reduced the IGBT current tail, cutting down switching losses and making these devices efficient in this frequency range. Several major companies have successfully implemented IGBTs in their SMPS applications.1 The usable current density of IGBTs is about 2 to 2.5 times that of a power MOSFET, enabling the use of a smaller die for the same current compared to a power MOSFET, therefore cutting cost. IGBTs are minority carrier devices and have superior conduction characteristics compared to power MOSFETs. This means that the IGBT offers a much lower conduction loss at higher currents, compared to an equivalent power MOSFET. Until recently, IGBTs needed a negative drive bias to assure adequate turn off under high dV/dt conditions in a half bridge topology. In addition to making the drive circuit complex, it also made difficult the use of standard gate driver ICs to drive these devices. The WARP Speed IGBTs from IR do not need a negative bias for proper turn-off, they will work with a 'positive only' gate drive, eliminating the need for an auxiliary power supply, simplifying the control circuitry.2 IR WARP Speed™ IGBTs for SMPS Applications |
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